Part Number Hot Search : 
VRE101C E101M FAN8001 KD1124 BP32E3 A5800290 045CT LT1001CH
Product Description
Full Text Search
 

To Download EID1415A1-8 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 EID1415A1-8
UPDATED 11/12/2007
14.40-15.35GHz 8-Watt Internally-Matched Power FET
FEATURES
* * * * * * 14.40-15.35GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 27% Power Added Efficiency 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25C)
SYMBOL P1dB G1dB G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1
Caution! ESD sensitive device. MIN 38.5 5.5 TYP 39.5 6.5 0.6 27 2800 4200 -1.2 3.5 3600 5760 -2.5 4.0
o
MAX
UNITS dBm dB dB % mA mA V C/W
Output Power at 1dB Compression f =14.40-15.35GHz VDS = 10 V, IDSQ 2200mA Gain at 1dB Compression f =14.40-15.35GHz VDS = 10 V, IDSQ 2200mA Gain Flatness f =14.40-15.35GHz VDS = 10 V, IDSQ 2200mA Power Added Efficiency at 1dB Compression f =14.40-15.35GHz VDS = 10 V, IDSQ 2200mA Drain Current at 1dB Compression f =14.40-15.35GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance
3
VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 mA
Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS PARAMETERS ABSOLUTE1 15V -5V 96.0mA -19.2mA 38.5dBm 175C -65C to +175C 37.5W CONTINUOUS2 10V -4V 28.8mA -4.8mA @ 3dB Compression 175C -65C to +175C 37.5W
Vds Vgs Igf Igr Pin Tch Tstg Pt
Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4 Revised November 2007
EID1415A1-8
UPDATED 11/12/2007
14.40-15.35GHz 8-Watt Internally-Matched Power FET
PERFORMANCE DATA
Typical S-Parameters (T= 25C, 50 system, de-embedded to edge of package) VDS = 10 V, IDSQ 2200mA
S11 and S22
0. 6
Swp Max 16GHz
0
-1.0
1.0
20
S21 and S12
-0 .8
0. 8
-0 .6
2.
-3
.0
-4
- 5. 0. 2
.0
-1 0. 0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0 5.0
0
-0
.4
0.
4
.0
S[2,2] * EID1415-8
.6
-0
-2
-0 .8
-1.0
FREQ (GHz)
--- S11 --MAG ANG
14.00 14.20 14.40 14.60 14.80 15.00 15.20 15.40 15.60 15.80 16.00
0.2450 0.2992 0.2904 0.2558 0.2117 0.1773 0.1484 0.1225 0.1012 0.0906 0.1147
-130.30 -148.84 -173.75 159.14 130.18 98.99 65.63 30.44 -7.86 -59.05 -115.00
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
-3
S[1,1] * EID1415-8
Swp Min 14GHz
- 5.
-4
0
.0
.0
3.
0
4.
5 .0
-0 .
2
-1 0. 0
0. 2
-0 .
0
S21 and S12 (dB)
2
-0
-2 .0
.4
0.
4
3.
0
4.
0
10
5 .0
10 .0
0
10.0
0
10 .0
4.0 5.0
2. 0
3.0
2.0
1.0 1.0
0.8
0.6
0. 8
0.4
0. 6
0.2
0
-10
DB(|S[2,1]|) * EID1415-8 DB(|S[1,2]|) * EID1415-8
-20
-30 14 14.5 15 Frequency (GHz) 15.5 16
--- S21 --MAG ANG
--- S12 --MAG ANG
--- S22 --MAG ANG
1.8778 2.1685 2.3778 2.4914 2.5593 2.5706 2.5618 2.5022 2.4780 2.4084 2.3324
115.29 100.98 82.93 64.05 45.58 27.10 8.94 -9.51 -27.74 -46.06 -64.47
0.0393 0.0463 0.0540 0.0582 0.0635 0.0649 0.0656 0.0675 0.0667 0.0671 0.0677
99.39 85.54 66.32 47.41 26.31 8.39 -11.68 -31.59 -50.84 -69.19 -88.41
0.3370 0.3201 0.3111 0.3062 0.3090 0.3143 0.3119 0.3086 0.2987 0.2882 0.2827
118.62 94.18 68.35 43.95 22.47 2.10 -17.31 -36.12 -55.37 -76.98 -99.97
page 2 of 4 Revised November 2007
EID1415A1-8
UPDATED 11/12/2007
14.40-15.35GHz 8-Watt Internally-Matched Power FET
Power De-rating Curve
Power Dissipation vs. Temperature
40 35 Total Power Dissipation (W) 30 25 20 15 10 5 0 0 25 50 75 100 125 Case Temperature (C) 150 175 Safe Operating Region Potentially Unsafe Operating Region
Typical Power Data (VDS = 10 V, IDSQ = 2200 mA)
42 41
P-1dB & G-1dB vs Frequency
11 10
P-1dB (dBm)
39 38 37 P-1dB (dBm) 36 14.2 14.4 14.6 14.8 15.0 15.2 G-1dB (dB) 15.4
8 7 6 5 15.6
Frequency (GHz)
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
G-1dB (dB)
40
9
page 3 of 4 Revised November 2007
EID1415A1-8
UPDATED 11/12/2007
14.40-15.35GHz 8-Watt Internally-Matched Power FET
PACKAGES OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
EID1415A1-8 (Hermetic) EID1415A1-8NH (Non-Hermetic)
Excelics
EID1415A1-8
Excelics
EID1415A1-8NH
YYWW
SN
YYWW
SN
ALL DIMENSIONS IN INCHES
ALL DIMENSIONS IN INCHES
Caution! ESD sensitive device.
Caution! ESD sensitive device.
ORDERING INFORMATION
Part Number EID1415A1-8 EID1415A1-8NH
Notes:
Packages Hermetic Non-Hermetic
Grade1 Industrial Industrial
fTest (GHz) 14.40-15.35GHz 14.40-15.35GHz
P1dB (min) 38.5 38.5
1. Contact factory for military and hi-rel grades. 2. Exact test conditions are specified in "Electrical Characteristics" table.
DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 4 of 4 Revised November 2007


▲Up To Search▲   

 
Price & Availability of EID1415A1-8

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X